GD3600SGT170C4S,IGBT Module,3600V 1700A,STARPOWER

Symbol

Description

GD3600SGT170C4S

Units

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current@ TC=25℃

Collector Current@ TC=80℃

5200

A

3600

ICM(1)

Pulsed Collector Current    tp= 1ms

7200

A

IF

Diode Continuous Forward Current

3600

A

IFM

Diode Maximum Forward Current

7200

A

PD

Maximum power Dissipation    @ Tj= 175℃

19.7

kW

Tj

Maximum Junction Temperature

175

℃

TSTG

Storage Temperature Range

-40 to +125

℃

VISO

Isolation Voltage    RMS,f=50Hz,t=1min

2500

V

Mounting

Signal Terminal Screw:M4

Power Terminal Screw:M8

1.8 to 2.1

8.0 to 10

N.m

Torque

Mounting Screw:M6

4.25 to 5.75

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CES

Collector-Emitter

Breakdown Voltage

Tj=25℃

1700

V

ICES

Collector Cut-Off Current

VCE=VCES,VGE=0V, Tj=25℃

5.0

mA

IGES

Gate-Emitter Leakage

Current

VGE=VGES,VCE=0V, Tj=25℃

400

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VGE(th)

Gate-Emitter Threshold

Voltage

IC= 145mA,VCE=VGE, Tj=25℃

5.2

5.8

6.4

V

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=3600A,VGE=15V, Tj=25℃

2.00

2.45

V

IC=3600A,VGE=15V, Tj= 125℃

2.40

2.85

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

QG

Gate charge

VGE=- 15…+15V

42.0

μC

RGint

Internal Gate Resistor

Tj=25℃

0.5

Ω

td(on)

Turn-On Delay Time

VCC=900V,IC=3600A, RGon=0.4Ω,

RGoff=0.5Ω,

VGE=±15V,Tj=25℃

730

ns

tr

Rise Time

205

ns

td(off)

Turn-Off Delay Time

1510

ns

tf

Fall Time

185

ns

Eon

Turn-On Switching Loss

498

mJ

Eoff

Turn-Off Switching Loss

1055

mJ

td(on)

Turn-On Delay Time

VCC=900V,IC=3600A, RGon=0.4Ω,

RGoff=0.5Ω,

VGE=±15V,Tj= 125℃

785

ns

tr

Rise Time

225

ns

td(off)

Turn-Off Delay Time

1800

ns

tf

Fall Time

325

ns

Eon

Turn-On Switching Loss

746

mJ

Eoff

Turn-Off Switching Loss

1451

mJ

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

317

nF

Coes

Output Capacitance

13.2

nF

Cres

Reverse Transfer

Capacitance

10.5

nF

ISC

SC Data

tSC≤10μs,VGE=15V,

Tj=125℃,VCC= 1000V, VCEM≤1700V

14000

A

LCE

Stray Inductance

10

nH

RCC’+EE ’

Module Lead Resistance, Terminal To Chip

0.12

mΩ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward

Voltage

IF=3600A

Tj=25℃

1.80

2.20

V

Tj= 125℃

1.90

2.30

Qr

Recovered Charge

IF=3600A,

VR=900V,

RGon=0.4Ω,

VGE=- 15V

Tj=25℃

836

μC

Tj= 125℃

1451

IRM

Reverse Recovery Current

Tj=25℃

2800

A

Tj= 125℃

3300

Erec

Reverse Recovery Energy

Tj=25℃

590

mJ

Tj= 125℃

1051