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Reverse Blocking IGCT (RB-IGCT)

Reverse Blocking IGCT (RB-IGCT)

Home /  Products /  IGCT module /  Reverse Blocking IGCT (RB-IGCT)

YT-YT-RBC52L3300IC,Reverse Blocking IGCT Modules,

3300V 5200A

Brand:
YT
Spu:
YT-RBC52L3300IC
Appurtenance:

Product Brochure:DOWNLOAD

  • Introduction
  • Outline
Introduction

Key Advantages

  • Integrated reverse voltage blocking capability for simplified system design;

  • High voltage and high current capability for large-scale power conversion applications;

  • Ultra-low conduction losses for enhanced energy efficiency;

  • Fast turn-off capability with excellent switching performance;

  • Advanced press-pack package design with double-sided cooling capability;

  • High reliability under electrical, thermal, and mechanical stress conditions.

Applications

  • High-voltage direct current transmission (HVDC);

  • Flexible AC Transmission Systems (FACTS);

  • Medium-voltage and high-voltage converters;

  • Railway traction power systems;

  • Large-scale industrial power supplies;

  • Renewable energy and grid-connected power conversion systems;

  • Energy storage and high-power conversion applications.

微信图片_20260620071012_866_2.png微信图片_20260801153142_65_2.png

YT-RBC52L3300IC

Key Parameters

VDRM

V

3300

VRRM

V

3300

ITGQM

A

5200

ITSM

A

27×103

VTO

V

1.20

rT

0.26

VD

V

2000

Blocking Data

Symbol

Unit

Condition

Min

Type

Max

VDRM

V

门极单元上电, Tj =90,ID IDRM,tp=10ms

3300

VRRM

V

门极单元上电, Tj =90,IR IRRM,tp=10ms

3300

IDRM

mA

门极单元上电, Tj =90,VD=VDRM,tp=10ms

200

IRRM

mA

门极单元上电, Tj =90,VR=VRRM,tp=10ms

200

VD

V

门极单元上电,Tj=90℃, ID IDM

2000

On-State Data

Symbol

Unit

Condition

Min

Type

Max

ITAV

A

Tc=70℃, 正弦半波 双面冷却

1200

IT(RMS)

A

2500

ITSM

A

tp=10ms, Tj=90℃ 正弦半波

浪涌后不再加电压

27×103

I2t

A2s

3.92×106

VTM

V

ITM=4000A, Tj=90℃

2.25

VTO

V

Tj=90℃

IT=1000…7000A

1.20

rT

0.26

Turn-on Data

Symbol

Unit

Condition

Min

Type

Max

diT/dt(cr)

A/μs

f=0…1000Hz, Tj=25℃ 90℃, IT=5200A, VD= 2000V, ITM≤6000A

1000

td(on)

μs

VD=2000V, Tj=90

IT=5200A, di/dt=VD/Li Li=3μH

CCL=10μF, LCL=0.3μH DCL=DFWD

10

td(on)SF

μs

7

tr

μs

4

Eon

J

4

ITGQM

A

VD≤VDRM, Tj=90

VD=2000V, RS=0.35Ω CCL=10μF, LCL≤0.3μH DCL=DFWD

5200

td(off)

μs

VD=2000V, Tj=90 VD≤VDRM, RS=0.35Ω ITGQ=5200A, Li=3μH CCL=10μF, LCL=0.3μH DCL=DFWD

50

td(off)SF

μs

7

Eoff

J

50

Outline

yt yt rbc52l3300icreverse blocking igct modules-1

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